Research Article 
Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates
T. Detchprohm, M. Zhu, Y. Li, Y. Xia, L. Liu, D. Hanser and C. Wetzel
Journal of Crystal Growth, 2009, 311(10), 2937-2941. DOI: 10.1016/j.jcrysgro.2009.01.060
Abstract
We demonstrate homoepitaxial growth of GaInN/GaN-based green (500–560 nm) light emitting diodes (LEDs) on a-plane and m-plane quasi-bulk GaN prepared by hydride vapor phase epitaxy (HVPE). We find that in order to achieve an emission peak wavelength beyond 500 nm, a minimum InN-fraction of 
14% is needed for both, a- and m-plane quantum wells (QWs), while 8% are enough for c-plane-oriented QWs. Besides increasing the InN-fraction in these non-polar QWs, widening the QW also proves to effectively shift the emission to longer wavelengths without loosing efficiency with the benefit of maintaining a low InN-fraction.
ASCI-ID: 2649-46
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